BFG541,115 datasheet

Маркировка

BFG541,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BFG541,115 Collector- Emitter Voltage Vceo Max: 15 V Configuration: Single Dual Emitter Continuous Collector Current: 0.12 A Current - Collector (ic) (max): 120mA Dc: 08+ Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 40mA, 8V Dc Current Gain Hfe Max: 60 @ 40mA @ 8V Emitter- Base Voltage Vebo: 2.5 V Frequency - Transition: 9GHz Gain: - ID_COMPONENTS: 1948990 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 9000 MHz (Typ) Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 650mW Power Dissipation: 650 mW Quantity: 40 Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 15V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 2.5 V DC Current Gain hFE Max: 60 Gain Bandwidth Product fT: 9000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: BFG541 T/R Other Names: 568-1984-2, 934018870115, BFG541 T/R
Количество страниц

14 шт.
Формат

PDF
(Для просмотра требуется Adobe Acrobat Reader)
Размер файла

136,86 KB